9014C
9014C is NPN Silicon Transistor manufactured by Unisonic Technologies.
FEATURES
- High total power dissipation. (450m W)
- Excellent h FE linearity.
- plementary to UTC 9015
TO-92
1: EMITTER
2: BASE
3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO Ic Pc Tj TSTG
RATING
50 45 5 100 450 150 -55 ~ +150
UNIT
V V V m A m W °C °C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Output Capacitance Current gain-Bandwidth Porduct Noise Figure
SYMBOL
BVCBO BVCEO BVEBO ICBO IEBO h FE VCE(sat) VBE(sat) VBE(on) Cob f T NF
TEST CONDITIONS
Ic=100µA, IE=0 Ic=1m A, IB=0 IE=100µA, Ic=0 VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V,Ic=1m A Ic=100m A, IB=5m A Ic=100m A, IB=5m A VCE=5V, Ic=2m A VCB=10V, IE=0, f=1MHz VCE=5V, Ic=10m A VCE=5V, Ic=0.2m A f=1KHz, Rs=2KΩ
50 45 5
UNIT
V V V n A n A V V V p F MHz d B
0.58 150
280 0.14 0.84 0.63 2.2 270 0.9
50 100 1000 0.3 1.0 0.7 3.5 10
UNISONIC TECHNOLOGIES CO., LTD.
QW-R201-031,A
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