9N120-E3
9N120-E3 is N-CHANNEL POWER MOSFET manufactured by Unisonic Technologies.
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
9.0A, 1200V N-CHANNEL POWER MOSFET
- DESCRIPTION
The UTC 9N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
- Features
- RDS(ON) ≤ 1.8 Ω @ VGS=10V, ID=4.5A
- Low Reverse Transfer Capacitance
- Fast Switching Capability
- Avalanche Energy Specified
- Improved dv/dt Capability, High Ruggedness
- SYMBOL
Power MOSFET
- ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
9N120L-T47-T
9N120G-T47-T
Pin Assignment: G: Gate D: Drain S: Source
Package TO-247
Pin Assignment
Packing Tube
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