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BC338 Datasheet Preview

BC338 Datasheet

NPN SILICON TRANSISTOR

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BC338 pdf
UNISONIC TECHNOLOGIES CO., LTD
BC337/BC338
NPN SILICON TRANSISTOR
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
* Suitable for AF-Driver stages and low power output stages
* Complement to UTC BC327/328
1
TO-92
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
BC337L-xx-T92-B
BC337G-xx-T92-B
BC337L-xx-T92-K
BC337G-xx-T92-K
BC338L-xx-T92-B
BC338G-xx-T92-B
BC338L-xx-T92-K
BC338G-xx-T92-K
Pin Assignment: C: Collector B: Base E: Emitter
Package
TO-92
TO-92
TO-92
TO-92
Pin Assignment
123
CBE
CBE
CBE
CBE
Packing
Tape Box
Bulk
Tape Box
Bulk
MARKING
BC337
BC338
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., LTD
1 of 3
QW-R201-039.E



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UTC

BC338 Datasheet Preview

BC338 Datasheet

NPN SILICON TRANSISTOR

No Preview Available !

BC338 pdf
BC337/BC338
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
BC337
BC338
VCES
50 V
30 V
Collector-Emitter Voltage
BC337
BC338
VCEO
45 V
25 V
Emitter-Base Voltage
Collector Current (DC)
VEBO
IC
5V
800 mA
Collector Dissipation
Derate Above 25°C
PC
625 mW
5 mW/°C
Junction Temperature
Operating Temperature
TJ
TOPR
125
-20 ~ +85
°C
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJc
RATINGS
200
83.3
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
Collector-Emitter
Breakdown
Voltage
BC337
BC338
Collector-Emitter
Breakdown
Voltage
BC337
BC338
Emitter-Base Breakdown Voltage
Collector Cut-off Current
BC337
BC338
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter on Voltage
Output Capacitance
Current Gain Bandwidth Product
SYMBOL
TEST CONDITIONS
BVCEO IC=10mA, IB=0
BVCES IC=0.1mA, VBE=0
BVEBO
ICES
hFE1
hFE2
VCE(SAT)
VBE(ON)
Cob
fT
IE=0.1mA, IC=0
VCE=45V, IB=0
VCE=25V, IB=0
VCE=1V, IC=100mA
VCE=1V, IC=300mA
IC=500mA, IB=50mA
VCE=1V, IC=300mA
VCB=10V, IE=0, f=1MHz
VCE=5V, IC=10mA, f=50MHz
CLASSIFICATION OF hFE1
RANK
hFE1
16
100-250
25
160-400
MIN TYP MAX UNIT
45 V
25 V
50 V
30 V
5V
2 100 nA
2 100 nA
100 630
60
0.7 V
1.2 V
12 pF
100 MHz
40
250-630
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R201-039.E


Part Number BC338
Description NPN SILICON TRANSISTOR
Maker UTC
Total Page 3 Pages
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BC338 pdf
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