BC846AS
Preliminary
DUAL TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
65
6
V
V
Collector Current
Peak Collector Current
IC 100 mA
ICM 200 mA
Peak Emitter Current
Power Dissipation
IEM 200 mA
PD 325 mW
Operating Temperature Range
TJ
-40 ~ +150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
Junction to Ambient
θJA
Note: Device mounted on FR-4 PCB minimum land pad.
RATINGS
384.6
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=10μA, IB=0
IC=10mA, IB=0
IE=1μA, IC=0
ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
hFE
VCE(SAT)
VBE(SAT)
VBE(ON)
VCE=5.0V, IC=2.0mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5.0mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5.0mA
VCE=5.0V, IC=2.0mA
VCE=5.0V, IC=10mA
SMALL SIGNAL CHARACTERISTICS
ICES VCE=80V
Collector-Cutoff Current
ICBO
VCB=40V
VCB=30V, TA=150°C
Gain Bandwidth Product
fT
VCE=5.0V, IC=10mA,
f=100MHz
Collector-Base Capacitance
CCB VCB=10V, f=1.0MHz
Note: Short duration pulse test used to minimize self-heating effect.
MIN TYP MAX UNIT
80 V
65 V
6V
110 220
90 250 mV
200 600 mV
700 mV
900 mV
580 660 700 mV
770 mV
100
2
15 nA
15 nA
5 µA
MHz
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R221-036 .a
