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BCP69 Datasheet Preview

BCP69 Datasheet

PNP MEDIUM POWER TRANSISTOR

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UNISONIC TECHNOLOGIES CO., LTD
BCP69
PNP EPITAXIAL SILICON TRANSISTOR
PNP MEDIUM POWER
TRANSISTOR
FEATURES
* High current (max. 1 A)
* Low voltage (max. 20 V).
* Complementary to UTC BCP68
APPLICATIONS
* General purpose switching and amplification
* Power applications such as audio output stages.
1
SOT-223
*Pb-free plating product number:BCP69L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
BCP69-xx-AA3-F-R BCP69L-xx-AA3-F-R
Pawwcwk.DaagtaeSheet4U.co1Pm in
Assignment
23
SOT-223 B C E
Packing
Tape Reel
BCP69L-xx-AA3-F-R
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Rank
(5)Lead Plating
(1) R: Tape Reel
(2) refer to Pin Assignment
(3) AA3: SOT-223
(4) xx: refer to Classification of hFE
(5) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 3
QW-R207-009,C




UTC

BCP69 Datasheet Preview

BCP69 Datasheet

PNP MEDIUM POWER TRANSISTOR

No Preview Available !

BCP69
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C , unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage (Open Emitter)
VCBO
-32
V
Collector-Emitter Voltage (Open Base)
VCEO
-20
V
Emitter-Base Voltage (Open Collector)
VEBO
-5
V
Collector Current (DC)
IC -1
A
Peak Collector Current
ICM -2
A
Peak Base Current
IBM -200 mA
Total Power Dissipation, Ta 25
PD 1.35
W
Junction Temperature
TJ 150
Operating Ambient Temperature
TOPR
-45 ~ +150
Storage Temperature
TSTG
-65 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Thermal Resistance From Junction To Ambient (Note 1)
θJA
91
K/W
ELECTRICAL CHARACTERISTICS (TJ = 25 , unless otherwise specified.)
PARAMETER
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Capacitance
Transition Frequency
DC current gain ratio of the
complementary pairs
SYMBOL
TEST CONDITIONS
VCE(SAT) IC = -1A, IB = -100mA
VBE
IC = -5mA, VCE = -10V
IC = -1A, VCE = -1V
ICBO
IE = 0, VCB = -25V
IE = 0, VCB = -25V, TJ = 150
IEBO IC = 0, VEB = -5V
IC = -5mA, VCE = -10V
hFE IC = -500mA, VCE = -1V
IC = -1A, VCE = -1V
CC IE = ie = 0, VCB = -5V, f = 1MHz
fT IC = -10mA, VCE = -5V, f = 100MHz
hFE1
hFE2
|IC| = 0.5A, |VCE| = 1V
MIN TYP MAX UNIT
-500 mV
-620
mV
-1 V
-100 nA
-10 µA
-100 nA
50
85 375
60
48 pF
40 MHz
1.6
CLASSIFICATION OF hFE
RANK
RANGE
16
100~250
25
160~375
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R207-009,C


Part Number BCP69
Description PNP MEDIUM POWER TRANSISTOR
Maker UTC
Total Page 3 Pages
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