datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf





UTC
UTC

BU931 Datasheet Preview

BU931 Datasheet

NPN POWER DARLINGTON

No Preview Available !

BU931 pdf
UNISONIC TECHNOLOGIES CO., LTD
BU931
NPN SILICON TRANSISTOR
NPN POWER DARLINGTON
„ FEATURES
* High operating junction temperature
* High voltage ignition coil driver
* Very rugged bipolar technology
„ INTERNAL SCHEMATIC DIAGRAM
1
TO-3P
1
TO-263
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
BU931L-T3P-T
BU931G-T3P-T
BU931L-TQ2-T
BU931G-TQ2-T
BU931L-TQ2-R
BU931G-TQ2-R
Package
TO-3P
TO-263
TO-263
Pin Assignment
123
BCE
BCE
BCE
Packing
Tube
Tube
Tape Reel
BU931L-T3P-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube, R: Tape Reel
(2) T3P: TO-3P, TQ2: TO-263
(3) L: Lead Free, G: Halogen Free
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 5
QW-R214-012,E



UTC
UTC

BU931 Datasheet Preview

BU931 Datasheet

NPN POWER DARLINGTON

No Preview Available !

BU931 pdf
BU931
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage (VBE=0)
VCES
500
V
Collector-Emitter Voltage (IB=0)
VCEO
400
V
Emitter-Base Voltage (IC=0)
Collector Current
VEBO
IC
5
15
V
A
Collector Peak Current
ICM 30
A
Base Current
Base Peak Current
IB 1 A
IBM 5 A
Power Dissipation (TC=25°C)
TO-3P
TO-263
PD
135
125
W
W
Junction Temperature
TJ
+200
°C
Storage Temperature
TSTG
-65 ~ +200
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
Junction to Case
TO-3P
TO-263
SYMBOL
θJC
RATING
1.1
1.2
UNIT
°C/W
°C/W
„ ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector Cut-off Current (IB=0)
Emitter Cut-off Current (IC=0)
ICEO
VCE = 450 V
VCE =450V, TJ =125°C
IEBO
VEB = 5V
Collector-Emitter Saturation Voltage (Note)
IC = 7A, IB =70mA
VCE(SAT) IC = 8A, IB =100mA
IC = 10A, IB =250mA
IC = 7A, IB =70mA
Base-Emitter Saturation Voltage (Note)
VBE(SAT) IC = 8A, IB =100mA
IC = 10A, IB =250mA
DC Current Gain
hFE IC = 5A, VCE =10V
Diode Forward Voltage
Functional Test
VF IF = 10 A
VCC =24V, Vclamp =400V
L=7mH
Inductive Load Storage Time / Fall Time
tS
tF
Note: Pulsed: Pulse duration = 300μs, duty cycle 1.5 %
VCC = 12V, Vclamp =300V
L=7mH
IC =7A, IB =70mA
VBE =0, RBE =47
MIN TYP MAX UNIT
100 μA
0.5 mA
20 mA
1.6 V
1.8 V
1.8 V
2.2 V
2.4 V
2.5 V
300
2.5 V
8A
15 μs
0.5 μs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R214-012,E


Part Number BU931
Description NPN POWER DARLINGTON
Maker UTC
Total Page 5 Pages
PDF Download
BU931 pdf
BU931 Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 BU931 HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON ST Microelectronics
ST Microelectronics
BU931 pdf
2 BU931 NPN POWER DARLINGTON UTC
UTC
BU931 pdf
3 BU931 SILICON POWER TRANSISTOR SavantIC
SavantIC
BU931 pdf
4 BU9312AKS Servo signal processor Rohm
Rohm
BU9312AKS pdf
5 BU931P HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON ST Microelectronics
ST Microelectronics
BU931P pdf
6 BU931P SILICON POWER TRANSISTOR SavantIC
SavantIC
BU931P pdf
7 BU931R (BU931x / BU932x) NPN Power Darlington ST Microelectronics
ST Microelectronics
BU931R pdf
8 BU931R (BU931R / BU932R) SILICON POWER TRANSISTOR SavantIC
SavantIC
BU931R pdf
9 BU931RP (BU931x / BU932x) NPN Power Darlington ST Microelectronics
ST Microelectronics
BU931RP pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy