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F30NM60 Datasheet PDF

Unisonic Technologies F30NM60

F30NM60 is a N-Channel enhancement mode silicon gate super junction power MOSFET with fast body diode and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.
Part No. F30NM60
Datasheet F30NM60 Download
Manufacturer
Unisonic Technologies
Description N-CHANNEL MOSFET
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F30NM60 datasheet page 1 preview

DESCRIPTION

The UTC
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FEATURES

* RDS(ON) ≤ 0.13 Ω @ VGS=10V, ID=15A * Fast body diode MOSFET technology * High Switching Speed * 100% Avalanche Tested
● SYMBOL (2) Drain (5) Drain Power MOSFET (1) Gate (3) Source TO-220 / TO-220F1 TO-247 / TO-263 (1) Gate (2) Driver Source (3, 4) Power Source DFN8080-4 Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-754.E F30NM60 Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free F30NM60L-TA3-T F30NM60G-TA3-T F30NM60L-TF1-T F30NM60G-TF1-T F30NM60L-TQ2-T F30NM60G-TQ2-T F30NM60L-TQ2-R F30NM60G-TQ2-R F30NM60L-T47-T F30NM60G-T47-T F30NM60L-K04-8080-R F30NM60G-K04-8080-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-263 TO-263 TO-247 DFN8080-4 Pin Assignment 12345 GDS - GDS - GDS - GDS - GDS - GSSSD Packing Tube Tube Tube Tape Reel Tube Tape Reel
● MARKING TO-220 / TO-220F1 / TO-247 / TO-263 DFN8080-4 UNISONIC TECHNOLOGIES CO., LTD 2 of 7 QW-R205-754.E F30NM60 Power MOSFET
● ABSOLUTE MAXIM...
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