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F30NM65 - 650V N-CHANNEL MOSFET

General Description

The UTC F30NM65 is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode.

is designed high voltage, high speed power switching applications such.

such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(ON) ≤ 0.15 Ω @ VGS=10V, ID=15A.
  • Fast body diode MOSFET technology.
  • Low switching losses due to reduced Qrr.
  • Single Pulse Avalanche Energy Rated.
  • Fast Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Avalanche energy tested 9 1 TOLL-8B 5 1 DFN8080-4.
  • SYMBOL (2) Drain (5) Drain (9) Drain (1) Gate (3) Source TO-220 / TO-220F1 TO-247 / TO-263 (1) Gate (2) Driver Source (3, 4) Power Source DFN8080-4 (1) Gate (2) Dr.

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UNISONIC TECHNOLOGIES CO., LTD F30NM65 30A, 650V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC F30NM65 is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode. is designed high voltage, high speed power switching applications such. such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. 1 TO-220 1 TO-247 Power MOSFET 1 TO-220F1 1 TO-263  FEATURES * RDS(ON) ≤ 0.