Unisonic Technologies F30NM65
F30NM65 is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode.| Part No. | F30NM65 |
|---|---|
| Datasheet | F30NM65 Download |
| Manufacturer |  Unisonic Technologies |
| Description | 650V N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC is designed high voltage, high speed power switching applications such. such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. 1 TO-220 1 TO-247 Power MOSFET 1 TO-220F1 1 TO-263●
FEATURES
* RDS(ON) ≤ 0.15 Ω @ VGS=10V, ID=15A * Fast body diode MOSFET technology * Low switching losses due to reduced Qrr * Single Pulse Avalanche Energy Rated * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Avalanche energy tested 9 1 TOLL-8B 5 1 DFN8080-4● SYMBOL (2) Drain (5) Drain (9) Drain (1) Gate (3) Source TO-220 / TO-220F1 TO-247 / TO-263 (1) Gate (2) Driver Source (3, 4) Power Source DFN8080-4 (1) Gate (2) Driver Source (3, 4, 5, 6, 7, 8) Power Source TOLL-8B Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 9 QW-R205-868.E F30NM65 Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package Pin Assignment 123456789 Packing F30NM65L-TA3-T F30NM65G-TA3-T TO-220...
