F30NM65 - 650V N-CHANNEL MOSFET

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UTC

Part number	F30NM65
Manufacturer	UTC
File Size	719.11 KB
Description	650V N-CHANNEL MOSFET
Datasheet	F30NM65 Datasheet
Additional preview pages of the F30NM65 datasheet.

The UTC F30NM65 is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode.

is designed high voltage, high speed power switching applications such.

such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

S.
RDS(ON) ≤ 0.15 Ω @ VGS=10V, ID=15A.
Fast body diode MOSFET technology.
Low switching losses due to reduced Qrr.
Single Pulse Avalanche Energy Rated.
Fast Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Avalanche energy tested 9 1 TOLL-8B 5 1 DFN8080-4.
SYMBOL (2) Drain (5) Drain (9) Drain (1) Gate (3) Source TO-220 / TO-220F1 TO-247 / TO-263 (1) Gate (2) Driver Source (3, 4) Power Source DFN8080-4 (1) Gate (2) Dr.

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Published: Mar 3, 2024 |