Description
The UTC F30NM60 is a N-Channel enhancement mode silicon gate super junction power MOSFET with fast body diode and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.
Features
- S.
- RDS(ON) ≤ 0.13 Ω @ VGS=10V, ID=15A.
- Fast body diode MOSFET technology.
- High Switching Speed.
- 100% Avalanche Tested.
- SYMBOL
(2) Drain
(5) Drain
Power MOSFET
(1) Gate
(3) Source TO-220 / TO-220F1
TO-247 / TO-263
(1) Gate
(2) Driver Source
(3, 4) Power Source
DFN8080-4
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QW-R205-754.E
F30NM60
Power MOSFET.
F30NM60 Datasheet
