F30NM60 Description
The UTC F30NM60 is a N-Channel enhancement mode silicon gate super junction power MOSFET with fast body diode and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.
F30NM60 Key Features
- RDS(ON) ≤ 0.13 Ω @ VGS=10V, ID=15A
- Fast body diode MOSFET technology
- High Switching Speed
- 100% Avalanche Tested
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