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F30NM60 - N-CHANNEL MOSFET

General Description

The UTC F30NM60 is a N-Channel enhancement mode silicon gate super junction power MOSFET with fast body diode and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(ON) ≤ 0.13 Ω @ VGS=10V, ID=15A.
  • Fast body diode MOSFET technology.
  • High Switching Speed.
  • 100% Avalanche Tested.
  • SYMBOL (2) Drain (5) Drain Power MOSFET (1) Gate (3) Source TO-220 / TO-220F1 TO-247 / TO-263 (1) Gate (2) Driver Source (3, 4) Power Source DFN8080-4 www. unisonic. com. tw Copyright © 2024 Unisonic Technologies Co. , Ltd 1 of 7 QW-R205-754.E F30NM60 Power MOSFET.

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UNISONIC TECHNOLOGIES CO., LTD F30NM60 30A, 600V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC F30NM60 is a N-Channel enhancement mode silicon gate super junction power MOSFET with fast body diode and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.  FEATURES * RDS(ON) ≤ 0.13 Ω @ VGS=10V, ID=15A * Fast body diode MOSFET technology * High Switching Speed * 100% Avalanche Tested  SYMBOL (2) Drain (5) Drain Power MOSFET (1) Gate (3) Source TO-220 / TO-220F1 TO-247 / TO-263 (1) Gate (2) Driver Source (3, 4) Power Source DFN8080-4 www.unisonic.com.