F30NM65 Datasheet - UTC

650V N-CHANNEL MOSFET

F30NM65 Features

* RDS(ON) ≤ 0.15 Ω @ VGS=10V, ID=15A

* Fast body diode MOSFET technology

* Low switching losses due to reduced Qrr

* Single Pulse Avalanche Energy Rated

* Fast Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Avalanche energy tested 9 1 TOL

F30NM65 General Description

The UTC F30NM65 is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode. is designed high voltage, high speed power switching applications such. such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. 1 TO-220 1 TO-247 .

F30NM65 Datasheet (719.11 KB)

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Datasheet Details

Part number:

F30NM65

Manufacturer:

UTC

File Size:

719.11 KB

Description:

650v n-channel mosfet.

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F30NM65 650V N-CHANNEL MOSFET UTC

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F30NM65 Features

F30NM65 General Description

Datasheet Details

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