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F30NM65 - 650V N-CHANNEL MOSFET

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UTC

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F30NM65 650V N-CHANNEL MOSFET by UTC - Datasheet Preview — Datasheet preview – F30NM65

Datasheet Details

Part number	F30NM65
Manufacturer	UTC
File Size	719.11 KB
Description	650V N-CHANNEL MOSFET
Datasheet	F30NM65 Datasheet
Additional preview pages of the F30NM65 datasheet.

Product details

Description

The UTC F30NM65 is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode.

Features

S.
RDS(ON) ≤ 0.15 Ω @ VGS=10V, ID=15A.
Fast body diode MOSFET technology.
Low switching losses due to reduced Qrr.
Single Pulse Avalanche Energy Rated.
Fast Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Avalanche energy tested 9 1 TOLL-8B 5 1 DFN8080-4.
SYMBOL (2) Drain (5) Drain (9) Drain (1) Gate (3) Source TO-220 / TO-220F1 TO-247 / TO-263 (1) Gate (2) Driver Source (3, 4) Power Source DFN8080-4 (1) Gate (2) Dr.

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Published: Mar 3, 2024 |