* RDS(ON) ≤ 4.6 Ω @ VGS=10V, ID=1.5A * Fast body diode MOSFET technology * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggednes.

such, is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance .

The UTC F3N70-LC is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode, is designed high voltage, high speed power switching applications such, is designed to have better characteristics, such as fast switching time, low gate.

F3NK80Z

F3002

F3003

F3007S

F3027

F30D05

F30D10

F30D15

F30D20

F30D30

F30D40

F30D50

F30D60