Datasheet4U Logo Datasheet4U.com

UD4606 - DUAL-Channel Power MOSFET

General Description

The UTC UD4606 provides excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs.

The complementary MOSFETs may be help to form a level shifted high side switch and also for lots of other applications.

Key Features

  • S.
  • N-Channel: 30V/6.9A RDS(ON) ≤ 28 mΩ @ VGS=10V, ID=6.9A RDS(ON) ≤ 42 mΩ @ VGS=4.5V, ID=5.0A.
  • P-Channel: -30V/-6.0A RDS(ON) ≤ 35 mΩ @ VGS=-10V, ID=-6.0A RDS(ON) ≤ 58 mΩ @ VGS=-4.5V, ID=-5.0A.
  • Reliable and rugged.
  • SYMBOL DIP-8 SOP-8 1 TO-252-4.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
UD4KB05 4 Amp Glass Passivated Bridge Rectifier MCC
UD4KB10 4 Amp Glass Passivated Bridge Rectifier MCC
UD4KB100 4 Amp Glass Passivated Bridge Rectifier MCC
UD4KB20 4 Amp Glass Passivated Bridge Rectifier MCC
UD4KB40 4 Amp Glass Passivated Bridge Rectifier MCC

Other Datasheets by Unisonic Technologies

Part Number Description
UD4606Q Power MOSFET
UD4614 Dual-Channel MOSFET
UD4509-H N-CHANNEL / P-CHANNEL Power MOSFET
UD4809 N-CHANNEL Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD UD4606 DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) Power MOSFET  DESCRIPTION The UTC UD4606 provides excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs. The complementary MOSFETs may be help to form a level shifted high side switch and also for lots of other applications.  FEATURES * N-Channel: 30V/6.9A RDS(ON) ≤ 28 mΩ @ VGS=10V, ID=6.9A RDS(ON) ≤ 42 mΩ @ VGS=4.5V, ID=5.0A * P-Channel: -30V/-6.0A RDS(ON) ≤ 35 mΩ @ VGS=-10V, ID=-6.0A RDS(ON) ≤ 58 mΩ @ VGS=-4.5V, ID=-5.