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UD4606 - DUAL-Channel Power MOSFET

Description

The UTC UD4606 provides excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs.

The complementary MOSFETs may be help to form a level shifted high side switch and also for lots of other applications.

Features

  • S.
  • N-Channel: 30V/6.9A RDS(ON) ≤ 28 mΩ @ VGS=10V, ID=6.9A RDS(ON) ≤ 42 mΩ @ VGS=4.5V, ID=5.0A.
  • P-Channel: -30V/-6.0A RDS(ON) ≤ 35 mΩ @ VGS=-10V, ID=-6.0A RDS(ON) ≤ 58 mΩ @ VGS=-4.5V, ID=-5.0A.
  • Reliable and rugged.
  • SYMBOL DIP-8 SOP-8 1 TO-252-4.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UD4606 DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) Power MOSFET  DESCRIPTION The UTC UD4606 provides excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs. The complementary MOSFETs may be help to form a level shifted high side switch and also for lots of other applications.  FEATURES * N-Channel: 30V/6.9A RDS(ON) ≤ 28 mΩ @ VGS=10V, ID=6.9A RDS(ON) ≤ 42 mΩ @ VGS=4.5V, ID=5.0A * P-Channel: -30V/-6.0A RDS(ON) ≤ 35 mΩ @ VGS=-10V, ID=-6.0A RDS(ON) ≤ 58 mΩ @ VGS=-4.5V, ID=-5.
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