UK3919 Datasheet | Unisonic Technologies

DESCRIPTION This UK3919 N-Channel Logic Level MOSFET is produced using UTC Semiconductor advanced Power Trench process which has been tailored to make the on-state resistance minimum and yet maintain low gate charge for superior switching performance especially. The UK3919 is well suited for where low in-line power loss is needed in a very small outline surface mount package, such as low voltage and battery powered applications. - FEATURES - RDS(ON) = 5.6mΩ @VGS = 10 V - Low capacitance - Optimized gate charge - Fast switching capability - Avalanche energy specified - SYMBOL 2.Drain - Pb-free plating product number:UK3919L 1.Gate 3.Source - ORDERING INFORMATION Ordering Number Normal Lead Free Plating UK3919-TN3-R UK3919L-TN3-R UK3919-TN3-T UK3919L-TN3-T Package TO-252 TO-252 Pin Assignment 123 GDS GDS Packing Tape Reel Tube .unisonic..tw Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-200.A Power MOSFET - ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 25 V Gate to Source Voltage VGSS ±20...