USG120N10 - N-CHANNEL POWER MOSFET

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UTC

USG120N10 N-CHANNEL POWER MOSFET by UTC - Datasheet Preview — Datasheet preview – USG120N10

Datasheet Details

Part number	USG120N10
Manufacturer	UTC
File Size	169.09 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	USG120N10 Datasheet
Additional preview pages of the USG120N10 datasheet.

Product details

Description

The UTC USG120N10 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.

Features

RDS(ON) ≤ 4.5 mΩ @ VGS=10V, ID=20A RDS(ON) ≤ 6.5 mΩ @ VGS=6.0V, ID=20A.
High Switching Speed.
SYMBOL 2.Drain 1 TO-220 1 TO-263 1.Gate 3.Source.

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Published: Oct 29, 2023 |