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UT10N10 - N-CHANNEL POWER MOSFET

General Description

The UTC UT10N10 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed.

The UTC UT10N10 is suitable for high voltage synchronous rectifier and DC/DC converters, etc.

Key Features

  • For SOT-223 RDS(ON) ≤ 106 mΩ @ VGS=10V, ID=5.0A RDS(ON) ≤ 120 mΩ @ VGS=4.5V, ID=5.0A.
  • For TO-220/TO-252/SOP-8 RDS(ON) ≤ 96 mΩ @ VGS=10V, ID=5.0A RDS(ON) ≤ 110 mΩ @ VGS=4.5V, ID=5.0A.
  • High Switching Speed.
  • High Cell Density Trench Technology.
  • SYMBOL Drain Gate Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT10N10 10A, 100V N-CHANNEL POWER MOSFET POWER MOSFET  DESCRIPTION The UTC UT10N10 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed. The UTC UT10N10 is suitable for high voltage synchronous rectifier and DC/DC converters, etc.  FEATURES * For SOT-223 RDS(ON) ≤ 106 mΩ @ VGS=10V, ID=5.0A RDS(ON) ≤ 120 mΩ @ VGS=4.5V, ID=5.0A * For TO-220/TO-252/SOP-8 RDS(ON) ≤ 96 mΩ @ VGS=10V, ID=5.0A RDS(ON) ≤ 110 mΩ @ VGS=4.5V, ID=5.