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UT12NP10 - DUAL-CHANNEL POWER MOSFET

General Description

The UTC UT12NP10 incorporates an N-channel MOSFET and a P-channel MOSFET，it uses UTC’s advanced technology to provide customers a minimum on-state resistance and high-speed switching, thereby enabling high-density mounting.

Key Features

  • r>.
  • N-Channel RDS(on) ≤ 100 mΩ @ VGS=10V, ID=8.0A RDS(on) ≤ 125 mΩ @ VGS=4.5V, ID=6.0A.
  • P-Channel RDS(on) ≤ 165 mΩ @ VGS=-10V, ID=-8.0A RDS(on) ≤ 190 mΩ @ VGS=-4.5V, ID=-6.0A.
  • Enhancement mode.
  • Low on-resistance RDS(on).
  • Low gate charge.
  • Fast Switching and High efficiency.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT12NP10 Preliminary DUAL MIDDLE POWER MOSFET (N-CHANNEL/P-CHANNEL)  DESCRIPTION The UTC UT12NP10 incorporates an N-channel MOSFET and a P-channel MOSFET，it uses UTC’s advanced technology to provide customers a minimum on-state resistance and high-speed switching, thereby enabling high-density mounting. The UTC UT12NP10 is universally applied in high-speed switching, motor driver.  FEATURES * N-Channel RDS(on) ≤ 100 mΩ @ VGS=10V, ID=8.0A RDS(on) ≤ 125 mΩ @ VGS=4.5V, ID=6.0A * P-Channel RDS(on) ≤ 165 mΩ @ VGS=-10V, ID=-8.0A RDS(on) ≤ 190 mΩ @ VGS=-4.5V, ID=-6.