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UT1N10 - N-CHANNEL POWER MOSFET

General Description

The UTC UT1N10 is a N-channel power MOSFET providing very low on-resistance.

It has high efficiency and perfect cost-effectiveness.

It can be generally applied in the commercial and industrial fields.

Key Features

  • S.
  • RDS(ON) ≤ 0.5 Ω @ VGS=10V, ID=0.5A RDS(ON) ≤ 0.55 Ω @ VGS=4.5V, ID=0.5A.
  • Simple drive requirement SOT-23-3 (JEDEC TO-236) SOT-23 (EIAJ SC-59) 1 TO-252.
  • SYMBOL.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT1N10 Power MOSFET 1.0A, 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET 3 2 1 3 2 1  DESCRIPTION The UTC UT1N10 is a N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields.  FEATURES * RDS(ON) ≤ 0.5 Ω @ VGS=10V, ID=0.5A RDS(ON) ≤ 0.55 Ω @ VGS=4.5V, ID=0.