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UT2311-F - P-CHANNEL MOSFET

General Description

, at any time and without notice.

This document supersedes and replaces all information supplied prior to the publication hereof.

Key Features

  • S.
  • Extremely low on-resistance due to high density cell.
  • Perfect thermal performance and electrical capability with advanced technology of trench process.
  • SYMBOL Power MOSFET.

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UNISONIC TECHNOLOGIES CO., LTD UT2311-F -4.7A, -20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET  FEATURES * Extremely low on-resistance due to high density cell * Perfect thermal performance and electrical capability with advanced technology of trench process  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT2311L-AE2-R UT2311G-AE2-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-23-3 Pin Assignment 123 GSD Packing Tape Reel  MARKING Year: K: 2016 (1H) L: 2016 (2H) M: 2017 (1H) N: 2017 (2H) Week: 01~26 (A~Z) S Lot Code www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 5 QW-R210-047.