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UT2311 - P-Channel MOSFET

General Description

, at any time and without notice.

This document supersedes and replaces all information supplied prior to the publication hereof.

Key Features

  • S.
  • Extremely low on-resistance due to high density cell.
  • Perfect thermal performance and electrical capability with advanced technology of trench process Power MOSFET.
  • SYMBOL.

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Full PDF Text Transcription (Reference)

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UNISONIC TECHNOLOGIES CO., LTD UT2311 -4.0A, -20V P-CHANNEL ENHANCEMENT MODE MOSFET  FEATURES * Extremely low on-resistance due to high density cell * Perfect thermal performance and electrical capability with advanced technology of trench process Power MOSFET  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package Pin Assignment 123456 Packing UT2311L-AE2-R UT2311G-AE2-R SOT-23-3 G S D - - - Tape Reel UT2311L-AE3-R UT2311G-AE3-R SOT-23 G S D - - - Tape Reel UT2311L-K06B-2020-R UT2311G-K06B-2020-R DFN2020-6B D D G S D D Tape Reel Note: Pin Assignment: G: Gate S: Source D: Drain www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-365.