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UT2312 Datasheet N-channel MOSFET

Manufacturer: Unisonic Technologies

Overview: UNISONIC TECHNOLOGIES CO., LTD UT2312 5A, 20V N-CHANNEL ENHANCEMENT MODE.

General Description

The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • RDS(ON) ≤ 33 mΩ @ VGS =4.5V, ID =5.0 A.
  • RDS(ON) ≤ 40 mΩ @ VGS =2.5 V, ID =4.0 A.
  • Advanced trench process technology.
  • Excellent thermal and electrical capabilities.
  • High density cell design for ultra low on-resistance.
  • SYMBOL Power MOSFET.

UT2312 Distributor