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UT2312 - N-CHANNEL MOSFET

General Description

The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • RDS(ON) ≤ 33 mΩ @ VGS =4.5V, ID =5.0 A.
  • RDS(ON) ≤ 40 mΩ @ VGS =2.5 V, ID =4.0 A.
  • Advanced trench process technology.
  • Excellent thermal and electrical capabilities.
  • High density cell design for ultra low on-resistance.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT2312 5A, 20V N-CHANNEL ENHANCEMENT MODE MOSFET  DESCRIPTION The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 33 mΩ @ VGS =4.5V, ID =5.0 A * RDS(ON) ≤ 40 mΩ @ VGS =2.5 V, ID =4.