UT2315-H Description
The UTC UT2315-H is P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
UT2315-H Key Features
- Extremely low on-resistance due to high density cell
- Perfect thermal performance and electrical capability with advanced technology of trench process
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