Unisonic Technologies UT2315-H
UT2315-H is P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | UT2315-H |
|---|---|
| Datasheet | UT2315-H Download |
| Manufacturer |  Unisonic Technologies |
| Description | P-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* Extremely low on-resistance due to high density cell * Perfect thermal performance and electrical capability with advanced technology of trench process● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT2315L-AE2-R UT2315G-AE2-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-23-3 Pin Assignment 123 GSD Packing Tape Reel
● MARKING Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R210-049.a UT2315-H Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS -20 V VGSS ±10 V Continuous Drain Current Pulsed Drain Current ID -3.3 A IDM -13.2 A Peak Diode Recovery dv/dt (Note 4) dv/dt 2.5 V/ns Power Dissipation (TC=25°C) (Note 3) PD 1.56 W Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °C °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
