UT2315 Description
The UTC UT2315 is P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
UT2315 Key Features
- Extremely low on-resistance due to high density cell
- Perfect thermal performance and electrical capability with advanced technology of trench process
- SYMBOL
- ORDERING INFORMATION
- Tape Reel
- Tape Reel
- MARKING