Unisonic Technologies UT2315
UT2315 is P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | UT2315 |
|---|---|
| Datasheet | UT2315 Download |
| Manufacturer |  Unisonic Technologies |
| Description | P-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* Extremely low on-resistance due to high density cell * Perfect thermal performance and electrical capability with advanced technology of trench process● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package Pin Assignment 123456 Packing UT2315L-AE2-R UT2315G-AE2-R SOT-23-3 G S D - - - Tape Reel UT2315L-AE3-R UT2315G-AE3-R SOT-23 G S D - - - Tape Reel UT2315L-K06B-2020-R UT2315G-K06B-2020-R DFN2020-6B D D G S D D Tape Reel Note: Pin Assignment: G: Gate S: Source D: Drain Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 7 QW-R210-073.c UT2315
● MARKING SOT-23-3 / SOT-23 Preliminary Power MOSFET DFN2020-6B UNISONIC TECHNOLOGIES CO., LTD 2 of 7 QW-R210-073.c UT2315 Preliminary Power MOSFET
● ABSOLUTE MAXIMUM RATING (TC=25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±10 V Drain Current DC ID Pulsed (Note 2) IDM -3.3 -13.2 A A Peak Diode Recovery...
