UT2312H Description
The UT2312H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
UT2312H Key Features
- RDS(ON) ≤ 55 mΩ @ VGS =4.5V, ID =5.0 A
- RDS(ON) ≤ 85 mΩ @ VGS =2.5 V, ID =4.0 A
- Advanced trench process technology
- Excellent thermal and electrical capabilities
- High density cell design for ultra low on-resistance
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