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UT2312H Datasheet N-channel Power MOSFET

Manufacturer: Unisonic Technologies

Overview: UNISONIC TECHNOLOGIES CO., LTD UT2312H 5A, 20V N-CHANNEL ENHANCEMENT MODE.

General Description

The UT2312H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • RDS(ON) ≤ 55 mΩ @ VGS =4.5V, ID =5.0 A.
  • RDS(ON) ≤ 85 mΩ @ VGS =2.5 V, ID =4.0 A.
  • Advanced trench process technology.
  • Excellent thermal and electrical capabilities.
  • High density cell design for ultra low on-resistance.
  • SYMBOL 3.Drain Power MOSFET 3 2 1 SOT-23-3 (JEDEC TO-236) 1.Gate 2.Source.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Unisonic Technologies Logo UT2312 N-CHANNEL MOSFET Unisonic Technologies

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UT2312H Distributor