Unisonic Technologies UT2312H
The UT2312H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.| Part No. | UT2312H |
|---|---|
| Datasheet | UT2312H Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
* RDS(ON) ≤ 55 mΩ @ VGS =4.5V, ID =5.0 A * RDS(ON) ≤ 85 mΩ @ VGS =2.5 V, ID =4.0 A * Advanced trench process technology * Excellent thermal and electrical capabilities * High density cell design for ultra low on-resistance● SYMBOL 3.Drain Power MOSFET 3 2 1 SOT-23-3 (JEDEC TO-236) 1.Gate 2.Source
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT2312HL-AE2-R UT2312HG-AE2-R Note: Pin Assignment: G: Gate S: Source D: Drain UT2312HG-AE2-R (1)Packing Type (2)Package Type (3)Green Package Package SOT-23-3 Pin Assignment 1 2 3 G S D Packing Tape Reel (1) R: Tape Reel (2) AE2: SOT-23-3 (3) G: Halogen Free and Lead Free, L: Lead Free
● MARKING 23NH L: Lead Free G: Halogen Free Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 3 QW-R209-343.A UT2312H Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V Drain Current Continuous ID Pulsed (Note2) IDM 5 A 15 A Power Dissipation PD 0.5 W Junction Temperature Storage Temperature TJ TSTG +150 °С -55 ~ +150 °С Notes: 1.
