Datasheet4U Logo Datasheet4U.com

UT2312H - N-CHANNEL POWER MOSFET

General Description

excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • RDS(ON) ≤ 55 mΩ @ VGS =4.5V, ID =5.0 A.
  • RDS(ON) ≤ 85 mΩ @ VGS =2.5 V, ID =4.0 A.
  • Advanced trench process technology.
  • Excellent thermal and electrical capabilities.
  • High density cell design for ultra low on-resistance.
  • SYMBOL 3.Drain Power MOSFET 3 2 1 SOT-23-3 (JEDEC TO-236) 1.Gate 2.Source.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
UT2312 N-CHANNEL MOSFET Unisonic Technologies
UT2311 P-Channel MOSFET Unisonic Technologies
UT2316 N-CHANNEL MOSFET Unisonic Technologies
UT2301 20V P-CHANNEL MOSFET Unisonic Technologies
UT23014 DUAL T1/E1 TRANSFORMERS UNIVERSAL MICROELECTRONICS

Other Datasheets by Unisonic Technologies

Part Number Description
UT2311-F P-CHANNEL MOSFET
UT2315 P-CHANNEL POWER MOSFET
UT2315-H P-CHANNEL MOSFET
UT2319 P-CHANNEL POWER MOSFET
UT2301A P-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD UT2312H 5A, 20V N-CHANNEL ENHANCEMENT MODE MOSFET  DESCRIPTION The UT2312H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 55 mΩ @ VGS =4.5V, ID =5.0 A * RDS(ON) ≤ 85 mΩ @ VGS =2.5 V, ID =4.0 A * Advanced trench process technology * Excellent thermal and electrical capabilities * High density cell design for ultra low on-resistance  SYMBOL 3.Drain Power MOSFET 3 2 1 SOT-23-3 (JEDEC TO-236) 1.Gate 2.