Datasheet Summary
UNISONIC TECHNOLOGIES CO., LTD UT2312H
5A, 20V N-CHANNEL ENHANCEMENT MODE MOSFET
- DESCRIPTION The UT2312H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
- Features
- RDS(ON) ≤ 55 mΩ @ VGS =4.5V, ID =5.0 A
- RDS(ON) ≤ 85 mΩ @ VGS =2.5 V, ID =4.0 A
- Advanced trench process technology
- Excellent thermal and electrical capabilities
- High density cell design for ultra low on-resistance
- SYMBOL
3.Drain
Power MOSFET
3 2
1 SOT-23-3
(JEDEC TO-236)
1.Gate
2.Source
- ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT2312HL-AE2-R
UT2312HG...
