UT2312H - N-CHANNEL POWER MOSFET

Product Overview

UTC

UT2312H N-CHANNEL POWER MOSFET by UTC - Datasheet Preview — Datasheet preview – UT2312H

Datasheet Details

Part number	UT2312H
Manufacturer	UTC
File Size	394.04 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	UT2312H Datasheet
Additional preview pages of the UT2312H datasheet.

Product details

Description

The UT2312H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.This device is suitable for use as a load switch or in PWM applications.

Features

S.
RDS(ON) ≤ 55 mΩ @ VGS =4.5V, ID =5.0 A.
RDS(ON) ≤ 85 mΩ @ VGS =2.5 V, ID =4.0 A.
Advanced trench process technology.
Excellent thermal and electrical capabilities.
High density cell design for ultra low on-resistance.
SYMBOL 3.Drain Power MOSFET 3 2 1 SOT-23-3 (JEDEC TO-236) 1.Gate 2.Source.

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Published: Nov 18, 2023 |