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UT30N04 Datasheet Preview

UT30N04 Datasheet

N-CHANNEL MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
UT30N04
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30A, 40V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UT30N04 is a N-channel enhancement MOSFET using
UTC’s advanced technology to provide the customers with perfect
RDS(ON) and high switching speed.
The UTC UT30N04 is suitable for all commercial-industrial
applications at power dissipation levels to approximately 50 watts,
etc.
FEATURES
* RDS(ON) 13m@ VGS=10V, ID=15A
RDS(ON) 25m@ VGS=4.5V, ID=15A
* High Switching Speed
SYMBOL
1
Power MOSFET
TO-251
SOP-8
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT30N04L-TM3-T
UT30N04G-TM3-T
UT30N04L-S08-R
UT30N04G-S08-R
Note: Pin Assignment: Source G: Gate D: Drain
Package
TO-251
SOP-8
Pin Assignment
12345678
Packing
G D S - - - - - Tube
S S S G D D D D Tape Reel
MARKING
TO-251
www.unisonic.com.tw
Copyright © 2018 Unisonic Technologies Co., Ltd
SOP-8
1 of 5
QW-R209-301.b




UTC

UT30N04 Datasheet Preview

UT30N04 Datasheet

N-CHANNEL MOSFET

No Preview Available !

UT30N04
Advance
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 40 V
VGSS ±20 V
Drain Current
Continuous (VGS=10V)
Pulsed (Note 2)
ID
IDM
30 A
60 A
Power Dissipation
TO-251
SOP-8
PD
50 W
2.5 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
TO-251
SOP-8
θJA
110
62.5
Junction to Case
TO-251
SOP-8
θJC
2.5
50 (Note)
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
UNIT
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-
Source
Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
VGS=0V, ID=250µA
VDS=40V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=15A
VGS=4.5V, ID=15A
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Drain-Source Diode Forward Voltage
VSD IS=60A,VGS=0V
Notes: 1. Pulse Test : Pulse width 300μs, Duty cycle 2%.
2. Essentially independent of operating ambient temperature.
MIN TYP MAX UNIT
40 V
1 µA
+100 nA
-100 nA
1.0 3.0 V
13 m
25 m
30 A
60 A
1.4 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R209-301.b


Part Number UT30N04
Description N-CHANNEL MOSFET
Maker UTC
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