Datasheet4U Logo Datasheet4U.com

UT30N06H - N-CHANNEL MOSFET

Datasheet Summary

Description

The UTC UT30N06H uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as high current switching applications.

Features

  • RDS(ON) ≤ 16 mΩ @ VGS=10V, ID=15A.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL 1 TO-252 SOP-8.

📥 Download Datasheet

Datasheet preview – UT30N06H

Datasheet Details

Part number UT30N06H
Manufacturer UTC
File Size 696.56 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet UT30N06H Datasheet
Additional preview pages of the UT30N06H datasheet.

📁 Similar Datasheet

  • UT3005 - STANDARD RECOVERY RECTIFIERS (Digitron Semiconductors)
  • UT3005 - Standard Recovery Rectifiers (Microsemi)
  • UT3006 - N-Channel Power MOSFET (Unisonic Technologies)
  • UT3010 - STANDARD RECOVERY RECTIFIERS (Digitron Semiconductors)
  • UT3010 - Standard Recovery Rectifiers (Microsemi)
  • UT3020 - STANDARD RECOVERY RECTIFIERS (Digitron Semiconductors)
  • UT3020 - Standard Recovery Rectifiers (Microsemi)
  • UT3040 - STANDARD RECOVERY RECTIFIERS (Digitron Semiconductors)
  • UT3040 - Standard Recovery Rectifiers (Microsemi)
  • UT3060 - STANDARD RECOVERY RECTIFIERS (Digitron Semiconductors)
Other Datasheets by UTC
  • UT30N04 - N-CHANNEL MOSFET
  • UT30N15H - N-CHANNEL POWER MOSFET
  • UT30NP04 - DUAL-CHANNEL POWER MOSFET
  • UT3008-H - P-CHANNEL POWER MOSFET
  • UT306S - 60V SHIELDED GATE N-CHANNEL POWER MOSFET
  • UT30P03 - P-CHANNEL MOSFET
  • UT30P04 - P-CHANNEL MOSFET
  • UT3202 - 3.0V TO 5.5V LOW POWER MULTICHANNEL RS-232 LINE TRANSCEIVERS

Full PDF Text Transcription

Click to expand full text
UNISONIC TECHNOLOGIES CO., LTD UT30N06H 30A, 60V N-CHANNEL ENHANCEMENT MODE Power MOSFET  DESCRIPTION The UTC UT30N06H uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as high current switching applications.
Published: |