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UT30N06H - N-CHANNEL MOSFET

General Description

The UTC UT30N06H uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as high current switching applications.

Key Features

  • RDS(ON) ≤ 16 mΩ @ VGS=10V, ID=15A.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL 1 TO-252 SOP-8.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT30N06H 30A, 60V N-CHANNEL ENHANCEMENT MODE Power MOSFET  DESCRIPTION The UTC UT30N06H uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as high current switching applications.