Download UT30P03 Datasheet PDF
UT30P03 page 2
Page 2
UT30P03 page 3
Page 3

UT30P03 Key Features

  • RDS(ON) ≤ 40mΩ @ VGS=-10V, ID =-10A RDS(ON) ≤ 60mΩ @ VGS=-4.5V, ID =-10A
  • Low Capacitance
  • Optimized gate charge
  • Fast switching capability
  • Avalanche energy specified
  • SYMBOL
  • ORDERING INFORMATION
  • MARKING

UT30P03 Description

UNISONIC TECHNOLOGIES CO., LTD UT30P03 P-CHANNEL ENHANCEMENT MODE POWER MOSFET Power MOSFET.