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UT4957 - P-Channel Power MOSFET

Description

The UT4957 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • S.
  • RDS(ON) ≤ 24mΩ @ VGS=-10V, ID=-7A.
  • RDS(ON) ≤ 36mΩ @ VGS=-4.5V, ID=-5A.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UT4957 P-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UT4957 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 24mΩ @ VGS=-10V, ID=-7A * RDS(ON) ≤ 36mΩ @ VGS=-4.5V, ID=-5A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT4957L-S08-R UT4957G-S08-R Note: Pin Assignment: G: Gate D: Drain Package SOP-8 S: Source Pin Assignment 12345678 S1 G1 S2 G2 D2 D2 D1 D1 Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co.
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