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UT50P10H - P-CHANNEL POWER MOSFET

General Description

The UT50P10H uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

Key Features

  • S.
  • RDS(ON) ≤ 65 mΩ @ VGS=-10V, ID=-25A.
  • High Switching Speed.
  • High Cell Density Trench Technology.
  • SYMBOL 2.Drain 1.Gate 3.Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT50P10H Preliminary -50A, -100V P-CHANNEL POWER MOSFET POWER MOSFET  DESCRIPTION The UT50P10H uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.  FEATURES * RDS(ON) ≤ 65 mΩ @ VGS=-10V, ID=-25A * High Switching Speed * High Cell Density Trench Technology  SYMBOL 2.Drain 1.Gate 3.