Datasheet4U Logo Datasheet4U.com

UT5N10 - N-CHANNEL POWER MOSFET

Description

The UTC UT5N10 is an N-channel power MOSFET providing very low on-resistance.

It has high efficiency and perfect cost-effectiveness.

It can be generally applied in the commercial and industrial fields.

Features

  • S.
  • RDS(ON) ≤ 130 mΩ @ VGS =10V, ID =3.0A RDS(ON) ≤ 180 mΩ @ VGS =4.5V, ID =2.0A.
  • Simple drive requirement.
  • SYMBOL Drain Power MOSFET Gate Source.

📥 Download Datasheet

Datasheet preview – UT5N10

📁 Similar Datasheet

  • UT5003 - N-CHANNEL/P-CHANNEL Power MOSFET (Unisonic Technologies)
  • UT5003Z - N-CHANNEL/P-CHANNEL Power MOSFET (Unisonic Technologies)
  • UT50N03 - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • UT5105 - RECTIFIERS (Microsemi Corporation)
  • UT5105HR2 - RECTIFIERS (Microsemi Corporation)
  • UT5110 - RECTIFIERS (Microsemi Corporation)
  • UT5110HR2 - RECTIFIERS (Microsemi Corporation)
  • UT5120 - RECTIFIERS (Microsemi Corporation)
  • UT5120HR2 - RECTIFIERS (Microsemi Corporation)
  • UT5140 - RECTIFIERS (Microsemi Corporation)
Other Datasheets by UTC

Full PDF Text Transcription

Click to expand full text
UNISONIC TECHNOLOGIES CO., LTD UT5N10 N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UT5N10 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields.  FEATURES * RDS(ON) ≤ 130 mΩ @ VGS =10V, ID =3.0A RDS(ON) ≤ 180 mΩ @ VGS =4.5V, ID =2.
Published: |