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UT50P10H - P-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UT50P10H uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

Features

  • S.
  • RDS(ON) ≤ 65 mΩ @ VGS=-10V, ID=-25A.
  • High Switching Speed.
  • High Cell Density Trench Technology.
  • SYMBOL 2.Drain 1.Gate 3.Source.

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Datasheet Details

Part number UT50P10H
Manufacturer UTC
File Size 199.32 KB
Description P-CHANNEL POWER MOSFET
Datasheet download datasheet UT50P10H Datasheet
Additional preview pages of the UT50P10H datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UT50P10H Preliminary -50A, -100V P-CHANNEL POWER MOSFET POWER MOSFET  DESCRIPTION The UT50P10H uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.  FEATURES * RDS(ON) ≤ 65 mΩ @ VGS=-10V, ID=-25A * High Switching Speed * High Cell Density Trench Technology  SYMBOL 2.Drain 1.Gate 3.
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