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UT5N10 - N-CHANNEL POWER MOSFET

General Description

The UTC UT5N10 is an N-channel power MOSFET providing very low on-resistance.

It has high efficiency and perfect cost-effectiveness.

It can be generally applied in the commercial and industrial fields.

Key Features

  • S.
  • RDS(ON) ≤ 130 mΩ @ VGS =10V, ID =3.0A RDS(ON) ≤ 180 mΩ @ VGS =4.5V, ID =2.0A.
  • Simple drive requirement.
  • SYMBOL Drain Power MOSFET Gate Source.

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Full PDF Text Transcription (Reference)

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UNISONIC TECHNOLOGIES CO., LTD UT5N10 N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UT5N10 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields.  FEATURES * RDS(ON) ≤ 130 mΩ @ VGS =10V, ID =3.0A RDS(ON) ≤ 180 mΩ @ VGS =4.5V, ID =2.