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UT8NN10 - 100V DUAL N-CHANNEL MOSFET

General Description

The UTC UT8NN10 is a dual N-Channel enhancement mode power MOSFET, it provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • S.
  • RDS(ON) ≤ 120 mΩ @ VGS=10V, ID=2.0A RDS(ON) ≤ 145 mΩ @ VGS=4.5V, ID=2.0A.
  • Fast Switching Speed.
  • Simple Drive Requirement.
  • SYMBOL Power MOSFET SOP-8.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT8NN10 4.0A, 100V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UT8NN10 is a dual N-Channel enhancement mode power MOSFET, it provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness.  FEATURES * RDS(ON) ≤ 120 mΩ @ VGS=10V, ID=2.0A RDS(ON) ≤ 145 mΩ @ VGS=4.5V, ID=2.0A * Fast Switching Speed * Simple Drive Requirement  SYMBOL Power MOSFET SOP-8  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UT8NN10L-S08-R UT8NN10G-S08-R SOP-8 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12345678 Packing S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel www.unisonic.com.tw Copyright © 2022 Unisonic Technologies Co., Ltd 1 of 7 QW-R209-341.