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UTG75N65ND-S Datasheet - UTC

650V TRENCH GATE FIELD-STOP IGBT

UTG75N65ND-S Features

* High switching speed

* High avalanche ruggedness

* Low saturation voltage: VCE(SAT).Typ.=1.65V @ IC=75A, VGE=15V (TC =25°C)

* SYMBOL

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTG75N65NDL-T47-R UTG75N65NDG-T47-R TO-247 Note: Pin Assignment: G

UTG75N65ND-S General Description

The UTC UTG75N65ND-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG75N65ND-S is suitable for the resonant or soft switching applications. .

UTG75N65ND-S Datasheet (174.39 KB)

Preview of UTG75N65ND-S PDF

Datasheet Details

Part number:

UTG75N65ND-S

Manufacturer:

UTC

File Size:

174.39 KB

Description:

650v trench gate field-stop igbt.

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TAGS

UTG75N65ND-S 650V TRENCH GATE FIELD-STOP IGBT UTC

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