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UTT08N02Z-F - 20V N-CHANNEL POWER MOSFET

General Description

UTC UTT08N02Z-F is a N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

Key Features

  • S.
  • RDS(ON) ≤ 300 mΩ @ VGS=4.5V, ID=0.5A.
  • Suit for 1.5V gate drive.

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UNISONIC TECHNOLOGIES CO., LTD UTT08N02Z-F 800mA, 20V N-CHANNEL POWER MOSFET Power MOSFET 3  DESCRIPTION UTC UTT08N02Z-F is a N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.  FEATURES * RDS(ON) ≤ 300 mΩ @ VGS=4.5V, ID=0.5A * Suit for 1.5V gate drive applications * Improved dv/dt capability * Fast switching * Green device available  SYMBOL 3.Drain 12 SOT-323 3 2 1 SOT-523 3 2 1 SOT-723 1.Gate 2.