UTT08N02Z-F Overview
UTC UTT08N02Z-F is a N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
UTT08N02Z-F Key Features
- RDS(ON) ≤ 300 mΩ @ VGS=4.5V, ID=0.5A
- Suit for 1.5V gate drive