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UTT15N10 Datasheet Preview

UTT15N10 Datasheet

100V N-CHANNEL MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
UTT15N10
15A, 100V N-CHANNEL
POWER MOSFET
1
DESCRIPTION
The UTC UTT15N10 uses UTCs advanced proprietary, planar
stripe, DMOS technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is suitable
for use as high current switching applications.
FEATURES
* RDS(ON) 125 mΩ @ VGS=10V, ID=7.5A
RDS(ON) 150 mΩ @ VGS=4.5V, ID=7.5A
* Low on-state resistance
* Built-in gate protection diode
* High Switching Speed
* High Power and Current Handling Capability
SYMBOL
2.Drain
1
1
Power MOSFET
TO-220
TO-251
TO-252
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT15N10L-TA3-T
UTT15N10G-TA3-T
UTT15N10L-TM3-T
UTT15N10G-TM3-T
UTT15N10L-TN3-R
UTT15N10G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-251
TO-252
Pin Assignment
123
GD S
GD S
GD S
Packing
Tube
Tube
Tape Reel
UTT15N10G-TA3-T
(1)Packing Type
(1) T: Tube, R: Tape Reel
(2)Package Type
(2) TA3: TO-220, TM3: TO-251, TN3: TO-252
(3)Green Package
(3) G: Halogen Free and Lead Free, , L: Lead Free
MARKING
Lot Code
UTC
UTT15N10
1
L: Lead Free
G: Halogen Free
Date Code
www.unisonic.com.tw
Copyright © 2020 Unisonic Technologies Co., Ltd
1 of 5
QW-R209-067.E




UTC

UTT15N10 Datasheet Preview

UTT15N10 Datasheet

100V N-CHANNEL MOSFET

No Preview Available !

UTT15N10
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID 15 A
Avalanche Energy
Single Pulsed
EAS
10 mJ
Peak Diode Recovery dv/dt
dv/dt
10 V/ns
Power Dissipation
TO-220
TO-251/TO-252
PD
90 W
34.7 W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 ~ +150
°С
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=0.08mH, IAS=15A, VDD=50V, RG=25Ω, Starting TJ=25°С
4. ISD 7A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-251/TO-252
TO-220
TO-251/TO-252
SYMBOL
θJA
θJC
RATINGS
62.5
125
1.38
4.17
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
UNIT
°С/W
°С/W
°С/W
°С/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
Drain-Source Leakage Current
IDSS VDS=100V, VGS=0V
Gate-Body Leakage Current
IGSS VDS=0V, VGS=±20V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=10V, ID=1mA
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=7.5A
VGS=4.5V, ID=7.5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
Gate Source Charge
QGS VGS=10V, VDD=80V, ID=15A
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VGS=10V, VDS=30V, ID=7.5A
RG=25Ω
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source
Diode Forward Current
IS VGS=0V
Maximum Pulsed Drain-Source Diode
Forward Current
ISM Repetitive
Drain-Source Diode Forward Voltage
VSD IF=16A ,VGS=0V
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating ambient temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
100 V
10 µA
±10 µA
1.0 3.0 V
110 125 mΩ
135 150 mΩ
920 pF
55 pF
46 pF
20 nC
3 nC
5 nC
9 ns
5 ns
30 ns
4 ns
15 A
60 A
1.0 V
2 of 5
QW-R209-067.E


Part Number UTT15N10
Description 100V N-CHANNEL MOSFET
Maker UTC
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