UTT15N10 mosfet equivalent, 100v n-channel mosfet.
* RDS(ON) ≤ 125 mΩ @ VGS=10V, ID=7.5A RDS(ON) ≤ 150 mΩ @ VGS=4.5V, ID=7.5A
* Low on-state resistance * Built-in gate protection diode * High Switching Speed * High Power .
* FEATURES
* RDS(ON) ≤ 125 mΩ @ VGS=10V, ID=7.5A RDS(ON) ≤ 150 mΩ @ VGS=4.5V, ID=7.5A
* Low on-state resistance * B.
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