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UTT21NN03 - DUAL N-CHANNEL POWER MOSFET

General Description

The UTC UTT21NN03 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology.

Key Features

  • RDS(ON) ≤ 23 mΩ @ VGS=10V, ID=10.5A RDS(ON) ≤ 35 mΩ @ VGS=4.5V, ID=10.5A.
  • Fast Switching Speed.
  • Simple Drive Requirement.
  • SYMBOL Power MOSFET SOP-8 1 PDFN5×6 1 PDFN3×3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UTT21NN03 21A, 30V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UTT21NN03 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology.  FEATURES * RDS(ON) ≤ 23 mΩ @ VGS=10V, ID=10.5A RDS(ON) ≤ 35 mΩ @ VGS=4.5V, ID=10.