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UTT2523 - P-CHANNEL POWER MOSFET

General Description

The UTC UTT2523 is a P-channel MOS Field Effect Transistor.

it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.

The UTC UTT2523 is suitable for high voltage switching applications.

Key Features

  • RDS(ON) ≤ 1.2 Ω @ VGS=-10V, ID=-0.5A RDS(ON) ≤ 1.3 Ω @ VGS=-6.0V, ID=-0.5A.
  • High switching speed.
  • Low input capacitance.
  • SYMBOL POWER MOSFET 3 2 1 SOT-23 (EIAJ SC-59) 1 PDFN3×3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UTT2523 Preliminary -1.0A, -150V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT2523 is a P-channel MOS Field Effect Transistor. it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. The UTC UTT2523 is suitable for high voltage switching applications.  FEATURES * RDS(ON) ≤ 1.2 Ω @ VGS=-10V, ID=-0.5A RDS(ON) ≤ 1.3 Ω @ VGS=-6.0V, ID=-0.