UTT2N10 Key Features
- N-CHANNEL RDS(on) < 0.7Ω @VGS =10V RDS(on) < 1.0Ω @VGS = 4.5V
- High switching speed
- SYMBOL
- ORDERING INFORMATION
- MARKING
- Part: UTT2N10
- Manufacturer: Unisonic Technologies (official site)
- Size: 195.14 KB
Related Unisonic Technologies Datasheets
| Part Number | Description |
|---|---|
| UTT2N10-H | 100V HEXFET POWER MOSFET |
| UTT20N04 | 40V N-CHANNEL MOSFET |
| UTT20N06 | 60V N-CHANNEL MOSFET |
| UTT20N15 | 150V N-CHANNEL POWER MOSFET |
| UTT20P04 | P-CHANNEL POWER MOSFET |
UTT2N10 Description
The UTC UTT2N10 is a plementary enhancement mode MOSFET, it uses UTC advanced technology to provide customers low on resistance, low gate charge and low threshold voltage. The UTC UTT2N10 is universally applied in DC-AC Inverters and DC Motor control.