UTT3N10-H
UTT3N10-H is N-CHANNEL MOSFET manufactured by Unisonic Technologies.
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
2.5A, 100V N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
- DESCRIPTION
The UTC UTT3N10-H is an N-channel logic level enhancement mode field effect transistor, it uses UTC’s advanced technology to provide the customers with high switching speed and low gate charge.
- Features
- RDS(on) < 225mΩ @ VGS = 10V, ID = 1.25A RDS(on) < 360mΩ @ VGS = 4.5V, ID = 125A
- High switching speed
- Low grage
- SYMBOL
Power MOSFET
- ORDERING INFORMATION
Order Number
UTT3N10G-AA3-R Note: Pin Assignment: G: Gate D: Drain
S: Source
Package SOT-223
Pin Assignment 123 GDS
Packing Tape Reel
- MARKING
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QW-R209-061.a
Preliminary
Power MOSFET
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