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UTT10NP06 - N-CHANNEL / P-CHANNEL Power MOSFET

General Description

The UTC UTT10NP06 incorporates a N-channel MOSFET and a P-channel MOSFET，it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed, low gate charge and cost effectiveness.

The UTC UTT10NP06 is universally applied in low voltage applications.

FEA

Key Features

  • r>.
  • N-.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UTT10NP06 DUAL ENHANCEMENT MODE (N-CHANNEL / P-CHANNEL)  DESCRIPTION The UTC UTT10NP06 incorporates a N-channel MOSFET and a P-channel MOSFET，it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed, low gate charge and cost effectiveness. The UTC UTT10NP06 is universally applied in low voltage applications.  FEATURES *N-CHANNEL RDS(on) ≤ 56 mΩ @ VGS=10V, ID=5.0A RDS(on) ≤ 64 mΩ @ VGS=4.5V, ID=5.0A *P-CHANNEL RDS(on) ≤ 68 mΩ @ VGS=-10V, ID=-5.0A RDS(on) ≤ 88 mΩ @ VGS=-4.5V, ID=-5.0A * High switching speed  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 12 QW-R502-773.