UTT12NN10 Datasheet | Unisonic Technologies

UNISONIC TECHNOLOGIES CO., LTD UTT12NN10 2.5A, 100V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET - DESCRIPTION The UTC UTT12NN10 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology. - Features - RDS(ON) ≤ 0.28 Ω @ VGS=10V, ID=2.0A - Fast Switching Speed - Simple Drive Requirement - SYMBOL Power MOSFET SOP-8 PDFN3×3 - ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTT12NN10L-S08-R UTT12NN10G-S08-R SOP-8 UTT12NN10L-P3030-R UTT12NN10G-P3030-R PDFN3×3 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 234567 Packing S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel .unisonic..tw Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-196.D -...