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UTT12NN10 - DUAL N-CHANNEL POWER MOSFET

General Description

The UTC UTT12NN10 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology.

Key Features

  • RDS(ON) ≤ 0.28 Ω @ VGS=10V, ID=2.0A.
  • Fast Switching Speed.
  • Simple Drive Requirement.
  • SYMBOL Power MOSFET SOP-8 1 PDFN3×3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UTT12NN10 2.5A, 100V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UTT12NN10 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology.  FEATURES * RDS(ON) ≤ 0.28 Ω @ VGS=10V, ID=2.0A * Fast Switching Speed * Simple Drive Requirement  SYMBOL Power MOSFET SOP-8 1 PDFN3×3  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTT12NN10L-S08-R UTT12NN10G-S08-R SOP-8 UTT12NN10L-P3030-R UTT12NN10G-P3030-R PDFN3×3 Note: Pin Assignment: G: Gate D: Drain S: Source 1 Pin Assignment 234567 8 Packing S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel www.unisonic.com.