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UTT6NP10 - DUAL-CHANNEL POWER MOSFET

General Description

The UTC UTT6NP10 incorporates an N-channel MOSFET and a P-channel MOSFET，it uses UTC’s advanced technology to provide customers a minimum on-state resistance and high-speed switching, thereby enabling high-density mounting.

Key Features

  • r>.
  • RDS(on) ≤ 150 mΩ @ VGS=10V, ID=3.0A RDS(on) ≤ 200 mΩ @ VGS=4.5V, ID=3.0A.
  • RDS(on) ≤ 155 mΩ @ VGS=-10V, ID=-3.0A RDS(on) ≤ 210 mΩ @ VGS=-4.5V, ID=-3.0A.
  • High switching speed.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UTT6NP10 DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)  DESCRIPTION The UTC UTT6NP10 incorporates an N-channel MOSFET and a P-channel MOSFET，it uses UTC’s advanced technology to provide customers a minimum on-state resistance and high-speed switching, thereby enabling high-density mounting. The UTC UTT6NP10 is universally applied in high-speed switching, motor driver.  FEATURES * RDS(on) ≤ 150 mΩ @ VGS=10V, ID=3.0A RDS(on) ≤ 200 mΩ @ VGS=4.5V, ID=3.0A * RDS(on) ≤ 155 mΩ @ VGS=-10V, ID=-3.0A RDS(on) ≤ 210 mΩ @ VGS=-4.5V, ID=-3.