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UTT75N08M Datasheet Preview

UTT75N08M Datasheet

N-CHANNEL MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
UTT75N08M
Preliminary
75A, 80V N-CHANNEL
POWERTRENCH MOSFET
DESCRIPTION
The UTC UTT75N08M is an N-channel enhancement MOSFET,
it uses UTC’s advanced technology to provide the customers with
perfect RDS(ON), high switching speed, high current capacity and low
gate charge.
The UTC UTT75N08M is suitable for DC-DC converters, Off-Line
UPS, High Voltage Synchronous Rectifier, Primary Switch for 48V
and 24V Systems, etc.
FEATURES
* RDS(ON < 11 m@ VGS=10V, ID=75A
* High Switching Speed
* High Current Capacity
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT75N08ML-TA3-T
UTT75N08MG-TA3-T
UTT75N08ML-TC3-T
UTT75N08MG-TC3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-230
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
1 of 6
QW-R209-100.c




UTC

UTT75N08M Datasheet Preview

UTT75N08M Datasheet

N-CHANNEL MOSFET

No Preview Available !

UTT75N08M
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
80
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
Pulsed (Note 2)
ID
IDM
75
300
A
A
Single Pulsed Avalanche Energy (Note 3)
EAS
125 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5 V/ns
Power Dissipation
TO-220
TO-230
PD
125 W
167 W
Junction Temperature
TJ 150 °C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ.
3. L=0.1mH, IAS=50A, VDD=50V, RG=25 , Starting TJ = 25°C
4. ISD30A, di/dt200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
TO-220
TO-230
Junction to Case
TO-220
TO-230
SYMBOL
θJA
θJC
RATINGS
62.5
55
1
0.7
UNIT
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=80V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
80 V
1 µA
+100 nA
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=75A
1.0 3.0 V
11 m
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
4000
320
120
pF
pF
pF
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDD=50V,
ID=1.3A, IG=100µA
VDD=30V, ID=0.5A,
VGS=10V, RG=25
300 nC
14 nC
16 nC
56 ns
65 ns
780 ns
200 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
75 A
Maximum Pulsed Drain-Source Diode
Forward Current
Drain-Source Diode Forward Voltage
ISM
VSD ISD=75A
300 A
1.4 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R209-100.c


Part Number UTT75N08M
Description N-CHANNEL MOSFET
Maker UTC
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