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UTT7N03M - N-CHANNEL MOSFET

Datasheet Summary

Description

The UTC UTT7N03M is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology.

Features

  • RDS(ON) ≤ 30 mΩ @ VGS=10V, ID=7.0A RDS(ON) ≤ 40 mΩ @ VGS=4.5V, ID=7.0A.
  • High Cell Density Trench Technology.
  • High Power and Current Handling Capability.
  • SYMBOL.

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Datasheet preview – UTT7N03M

Datasheet Details

Part number UTT7N03M
Manufacturer UTC
File Size 272.10 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet UTT7N03M Datasheet
Additional preview pages of the UTT7N03M datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UTT7N03M 7A, 30V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET POWER MOSFET  DESCRIPTION The UTC UTT7N03M is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology. The UTC UTT7N03M is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.  FEATURES * RDS(ON) ≤ 30 mΩ @ VGS=10V, ID=7.0A RDS(ON) ≤ 40 mΩ @ VGS=4.5V, ID=7.
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