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UTT7N03M - N-CHANNEL MOSFET

General Description

The UTC UTT7N03M is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology.

Key Features

  • RDS(ON) ≤ 30 mΩ @ VGS=10V, ID=7.0A RDS(ON) ≤ 40 mΩ @ VGS=4.5V, ID=7.0A.
  • High Cell Density Trench Technology.
  • High Power and Current Handling Capability.
  • SYMBOL.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UTT7N03M 7A, 30V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET POWER MOSFET  DESCRIPTION The UTC UTT7N03M is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology. The UTC UTT7N03M is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.  FEATURES * RDS(ON) ≤ 30 mΩ @ VGS=10V, ID=7.0A RDS(ON) ≤ 40 mΩ @ VGS=4.5V, ID=7.