UTT7N03M Key Features
- RDS(ON) ≤ 30 mΩ @ VGS=10V, ID=7.0A RDS(ON) ≤ 40 mΩ @ VGS=4.5V, ID=7.0A
- High Cell Density Trench Technology
- High Power and Current Handling Capability
- SYMBOL
- ORDERING INFORMATION
- Part: UTT7N03M
- Description: N-CHANNEL MOSFET
- Manufacturer: Unisonic Technologies
- Size: 272.10 KB
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