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UTT8NN03 - DUAL N-CHANNEL POWER MOSFET

General Description

The UTC UTT8NN03 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology.

Key Features

  • RDS(ON) < 30 mΩ @ VGS=10V, ID=6.0A RDS(ON) < 40 mΩ @ VGS=4.5V, ID=3.0A.
  • Fast Switching Speed.
  • Simple Drive Requirement.
  • SYMBOL Power MOSFET SOP-8.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UTT8NN03 8A, 30V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UTT8NN03 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology.  FEATURES * RDS(ON) < 30 mΩ @ VGS=10V, ID=6.0A RDS(ON) < 40 mΩ @ VGS=4.5V, ID=3.0A * Fast Switching Speed * Simple Drive Requirement  SYMBOL Power MOSFET SOP-8  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTT8NN03L-S08-R UTT8NN03G-S08-R SOP-8 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12345678 Packing S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-288.