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Unigroup

TMD2N50HF Datasheet Preview

TMD2N50HF Datasheet

N-Channel Trench MOSFET

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TMA2N50HF, TMD2N50HF, TMU2N50HFTMZ2N50HF
Wuxi Unigroup Microelectronics Company
500V N-Channel MOSFET
FEATURES
Fast switching
Integrate fast recovery diode
Fast switching speed
100% avalanche tested
Improved dv/dt capability
APPLICATIONS
Switch Mode Power Supply (SMPS)
Motor Controls
Power Factor Correction (PFC)
TO-92
G
Device Marking and Package Information
Device
Package
Marking
TMA2N50HF
TO-220F
A2N50HF
TMD2N50HF
TO-252
D2N50HF
TMU2N50HF
TO-251
U2N50HF
TMZ2N50HF
TO-92
Z2N50HF
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
TO-220F
Value
TO-252
TO-251
Drain-Source Voltage (VGS = 0V)
Continuous Drain Current
Pulsed Drain Current
(note1)
Gate-Source Voltage
Single Pulse Avalanche Energy (note2)
Avalanche Current
(note1)
Repetitive Avalanche Energy
(note1)
Power Dissipation (TC = 25ºC)
Operating Junction and Storage Temperature
Range
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
PD
TJ, Tstg
10.5
500
2
8
±30
24
0.9
4
19
-55~+150
TO-92
Unit
V
A
A
V
mJ
A
mJ
W
ºC
Thermal Resistance
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RthJC
RthJA
TO-220F
11.9
62.5
Value
TO-252
TO-251
6.6
60
TO-92
Unit
ºC/W
V3.0
1 www.tsinghuaicwx.com




Unigroup

TMD2N50HF Datasheet Preview

TMD2N50HF Datasheet

N-Channel Trench MOSFET

No Preview Available !

TMA2N50HF, TMD2N50HF, TMU2N50HFTMZ2N50HF
Wuxi Unigroup Microelectronics Company
Specifications TJ = 25ºC, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance (Note3)
Dynamic
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-off Delay Time
td(off)
Turn-off Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
ISM
VSD
trr
Qrr
VGS = 0V, ID = 250µA
VDS = 500V, VGS = 0V, TJ = 25ºC
VGS = ±30V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 1A
VGS = 0V,
VDS = 25V,
f = 1.0MHz
VDD = 400V, ID = 2A,
VGS = 10V
VDD = 250V, ID = 2A,
RG = 25
TC = 25 ºC
TJ = 25ºC, ISD = 2A, VGS = 0V
VGS = 0V,IS = 2A,
diF/dt =100A /μs
Value
Min. Typ.
Max.
Unit
500 -- --
V
-- -- 1 μA
-- -- ±100 nA
3.0 -- 4.0 V
-- 7.0 8.5
-- 180 --
-- 22 --
-- 4 --
-- 5 --
-- 0.9 --
-- 3 --
-- 4 --
-- 35 --
-- 20 --
-- 63 --
pF
nC
ns
-- -- 2
A
-- -- 8
--
-- 1.4
V
-- 24 --
ns
-- 0.17 --
μC
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 0.9A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC
3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
V3.0
2 www.tsinghuaicwx.com


Part Number TMD2N50HF
Description N-Channel Trench MOSFET
Maker Unigroup
Total Page 8 Pages
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