Unigroup Datasheet | Specifications & PDF Download

TPA90R350A,TPB90R350A,TPP90R350A,TPW90R350A Wuxi Unigroup Microelectronics Co.,Ltd 900V Super-junction Power MOSFET Description 900V Super-junction P

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TPA60R330M Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-Junction Power MOSFET DESCRIPTION 600V super-junction Power MOSFET Super-junction power M

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TPA65R360M,TPB65R360M,TPC65R360M, TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET

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TPA65R380D,TPD65R380D Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junct

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TPA65R360M, TPD65R360M, TPP65R360M, TPU65R360M   Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES l   Very low FOM RDS

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TPA65R170M, TPP65R170M, TPV65R170M, TPW65R170M   Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES l   Very low FOM RDS

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TTD95N68A,TTU95N68A Wuxi Unigroup Microelectronics CO.,LTD. 68V N-Channel Trench MOSFET(Preliminary) General Description  Trench Power Technology 

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TPA80R300C,TPB80R300C, TPP80R300C,TPW80R300C Wuxi Unigroup Microelectronics Co.,Ltd 800V Super-junction Power MOSFET Description 800V Super-junction

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FEATURES  Fast switching  100% avalanche tested  Improved dv/dt capability TMA18N20H，TMP18N20H Wuxi Unigroup Microelectronics Company 200V N-Chann

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TPA65R360M, TPD65R360M, TPP65R360M, TPU65R360M   Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES l   Very low FOM RDS

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TSG12N06AT Wuxi Unigroup Microelectronics Co.,Ltd. 60V N-Channel DTMOS Features  Trench Power DTMOS Technology  Low RDS(ON)  Low Gate Charge  Op

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TMA4N65L,TMU4N65L,TMD4N65L, TMP4N65L Wuxi Tongfang Microelectronics Company 650V N-Channel MOSFET FEATURES  Fast switching  100% avalanche tested 

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TPA65R600C, TPB65R600C, TPC65R600C, TPD65R600C, TPP65R600C, TPU65R600C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURE

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FEATURES  Fast switching  100% avalanche tested  Improved dv/dt capability TMA7N55H, TMD7N55H, TMP7N55H, TMU7N55H Wuxi Unigroup Microelectronics C

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TTG90N03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V N-Channel Trench MOSFET(Preliminary) Features  Trench Power Technology  Low RDS(ON)  Low Ga

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TPA65R190MFD,TPB65R190MFD,TPP65R190MFD,TPW65R190MFD Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-ju

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TPA60R160M,TPP60R160M,TPV60R160M,TPW60R160M Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-junction Power MOSFET Description 600V Super-junction P

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TPV50R060C, TPW50R060C Wuxi Unigroup Microelectronics Company 500V Super-Junction Power MOSFET FEATURES  Very low FOM RDS(on)×Qg  100% avalanche tes

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TPV65R100MFD DESCRIPTION Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-Junction Power MOSFET 650V super-junction Power MOSFET Super-junction po

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TET45L40B Wuxi Unigroup Microelectronics Company Integrated Gate Turn-off (IGTO) Thyristor FEATURES  High snubberless turn-off (4000A) capability  S

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